Al/Ti/4H-SiC Schottky barrier diodes with inhomogeneous barrier heights

This paper investigates the current-voltage (I-V) characteristics of Al/Ti/4H-SiC Schottky barrier diodes (SBDs) in the temperature range of 77 K-500 K,which shows that Al/Ti/4H-SiC SBDs have good rectifying behaviour.An abnormal behaviour,in which the zero bias barrier height decreases while the ideality factor increases with decreasing temperature (T),has been successfully interpreted by using thermionic emission theory with Gaussian distribution of the barrier heights due to the inhomogeneous barrier height at the Al/Ti/4H-SiC interface.The effective Richardson constant A =154 A/cm 2 · K 2 is determined by means of a modified Richardson plot ln(I 0 /T 2)-(qσ) 2 /2(kT) 2 versus q/kT,which is very close to the theoretical value 146 A/cm 2 · K 2.     

Global features and trends of the tropopause derived from GPS/CHAMP RO data

The global characteristics and trends of the tropopause physical parameters,height and temperature,obtained from the GPS/CHAMP radio occultation(RO) data in the period from Jul.2001 to Oct.2008,were modeled and analyzed in this work.The global distribution and variation of these parameters with latitude were estimated and analyzed using the Empirical Orthogonal Function(EOF),which was introduced to reveal the possible relationship between the tropopause variations and global climate change.The tropopause he...     

A Stable and High‐Efficiency Blue‐Light Emitting Terphenyl‐Bridged Ladder Polysiloxane

A novel blue‐light emitting terphenyl‐bridged ladder polysiloxane ( TBLP) was prepared by the condensation of a tetrasilanol monomer via a ladder supramolecular structure. TBLPs emit narrow blue light (420 nm) with high quantum yields (0.96) in diluted solution and shows no evident fluorophore aggregation in the solid state, indicating that the terphenyls are well isolated due to confinement of the ladder‐rungs. In addition, it has excellent emission stability at high temperature based on TGA, DSC and annealing experiments. Overall, TBLPs can be considered as a potential material for fabricating stable and high‐efficiency blue‐light emitting optoelectronic devices.

     

双谐波高频系统的同步加速器中发射度主导的长束团研究

在质子储存环中,长束团的长期储存要求采用比较平的 bucket 以增加纵向接收度。对于经过相空间冷却的低能散的束流,束流内部的库仑散射作用不能被忽略。本文讨论了对于处在临界能量以下的发射度主导的长束团双谐波高频系统的特性。为了保持束团长度不变,高频电压应作适当的提高以补偿空间电荷效应的作用。初始失配的束流的纵向运动也分别对于单谐波或双谐波系统进行了研究,对于前者失配度为20%时,纵向接收度太小导致经过几个同步周期后就出现明显的束流纤维化和散束。本文还引入了一种空间电荷作用因子和纵向失配度的概念来研究和分析发射度主导的长束团的纵向运动。采用ORBIT程序对FAIR-HESR加速器中的束流纵向运动进行了模拟跟踪计算,并与理论分析进行了比较。     

Calculation of current–voltage characteristics of a Cu (II) complex/n-Si/AuSb Schottky diode

In this study, Cu (II) complex/n-Si structure has been fabricated by forming a thin organic Cu (II) complex film on n-Si wafer. It has been seen that the structure has clearly shown the rectifying behaviour and can be evaluated as a Schottky diode. The contact parameters of the diode such as the barrier height and the ideality factor have been calculated using several methods proposed by different authors from current–voltage (I–V) characteristics of the device. The calculated barrier height and ideality factor values from different methods have shown the consistency of the approaches. The obtained ideality factor which is greater than unity refers the deviation from ideal diode characteristics. This deviation can be attributed to the native interfacial layer in the organic/inorganic interface and the high series resistance of the diode. In addition, the energy distribution of the interface state density (N_ss) in the semiconductor band gap at Cu (II) complex/n-Si interface obtained from I–V characteristics range from 2.15 × 10¹³ cm⁻² eV⁻¹ at (E_c − 0.66) eV to 5.56 × 10¹² cm⁻² eV⁻¹ at (E_c − 0.84) eV.     

Parameter analysis for gate metal-oxide-semiconductor structures of ion-implanted 4H silicon carbide metal-semiconductor field-effect transistors

From the theoretical analysis of the thermionic emission model of current-voltage characteristics, this paper extracts the parameters for the gate Schottky contact of two ion-implanted 4H-SiC metal-semiconductor field-effect transistors (sample A and sample B for three and four times multiple ion-implantation channel region respectively) fabricated in the experiment, including the ideality factor, the series resistance, the zero-field barrier height, the interface oxide capacitance, the interface state density distribution, the neutral level of interface states and the fixed space charge density. The methods to improve the interface of the ion-implanted Schottky contact are given at last.     

Effect of diode size and series resistance on barrier height and ideality factor in nearly ideal Au/n type-GaAs micro Schottky contact diodes

Small high-quality Au/n type-GaAs Schottky barrier diodes (SBDs) with low reverse leakage current are produced using lithography. Their effective barrier heights (BHs) and ideality factors from current-voltage (I-V) characteristics are measured by a Pico ampere meter and home-built I-V instrument. In spite of the identical preparation of the diodes there is a diode-to-diode variation in ideality factor and barrier height parameters. Measurement of topology of a surface of a thin metal film with atomic force microscope (AFM) shows that Au-n type-GaAS SD consists of a set of parallel-connected micro and nanocontacts diodes with sizes approximately in a range of 100-200 nm. Between barrier height and ideality factor there is an inversely proportional dependency. With the diameter of contact increasing from 5 μm up to 200 μm, the barrier height increases from 0.833 up to 0.933 eV and its ideality factor decreases from 1.11 down to 1.006. These dependencies show the reduction of the contribution of the peripheral current with the diameter of contact increasing. We find the effect of series resistance on barrier height and ideality factor.     

Electrical metal contacts to atomically thin 2H-phase MoTe2 grown by metal–organic chemical vapor deposition

We grow atomically thin molybdenum ditelluride (MoTe₂) films on a SiO₂/Si substrate by means of metal–organic chemical vapor deposition (MOCVD). Our Raman spectroscopy measurements reveal the formation of 2H-phase MoTe₂ films. Further, transmission electron microscopy and X-ray photoelectron spectroscopy studies indicate a three-atomic-layer structure and the surface element composition of MoTe₂ films. In this study, we mainly focus on the influence of metal contacts attached to the films on their electrical performance. We fabricate 2H-phase-MoTe₂-based field-effect transistors (FETs) with various metal contacts such as titanium/gold, nickel and palladium, which present p-type semiconductor properties. We also examine the influence of the work functions of the contact metals on the electrical properties of three-atomic-layer-MoTe₂-based FET devices. For a p-type MoTe₂ semiconductor, higher work functions of the contact metals afford narrower Schottky barrier heights (SBHs) and eventually highly efficient carrier injection through the contacts.